发明名称 Ion implanting apparatus
摘要 In an ion implanting apparatus 10 including a separation slit 20 which receives an ion beam 1 having passed through a mass-separation electromagnet 17 and allows a desired type of ion to selectively pass therethrough, the separation slit 20 is operable to vary a shape of a gap through which the ion beam 1 passes. In addition, the ion implanting apparatus 10 includes a variable slit 30 which is disposed between an extraction electrode system 15 and the mass-separation electromagnet 17 so as to form a gap through which the ion beam 1 passes and is operable to vary a shape of the gap so as to shield a part of the ion beam 1 extracted from the ion source 12. The ion implanting apparatus 10 may include both or one of the separation slit 20 and the variable slit 30.
申请公布号 US7964856(B2) 申请公布日期 2011.06.21
申请号 US20070294674 申请日期 2007.03.27
申请人 IHI CORPORATION 发明人 NAKAMOTO ICHIRO;HORAI HIROSHI;SODEKODA TATSUYA;YOSHIDA MASAHIRO
分类号 G21K5/10 主分类号 G21K5/10
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