RESISTIVE SWITCHING IN NITROGEN-DOPED MgO

摘要

Nitrogen-doped MgO insulating layers exhibit voltage controlled resistance states, e.g., a high resistance and a low resistance state. Patterned nano-devices on the 100nm scale show highly reproducible switching characteristics. The voltage levels at which such devices are switched between the two resistance levels can be systematically lowered by increasing the nitrogen concentration. Similarly, the resistance of the high resistance state can be varied by varying the nitrogen concentration, and decreases by orders of magnitude by varying the nitrogen concentrations by a few percent. On the other hand, the resistance of the low resistance state is nearly insensitive to the nitrogen doping level. The resistance of single Mg50O50-xNx layer devices can be varied over a wide range by limiting the current that can be passed during the SET process. Associated data storage devices can be constructed.