| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has a JFET, a MOSFET or an MESFET capable of suppressing variations in the thickness of a channel layer, and to provide a method of manufacturing the semiconductor device. SOLUTION: After a recess 4 is formed by anisotropically etching an n<SP>+</SP>-type layer 3, an n-type channel layer 5 is formed by epitaxially growing the interior of the recess 4. This enables the n-type channel layer 5 to be formed to have a constant film thickness and a constant concentration. For this reason, unlike a conventional structure, the n-type channel layer 5 can have a structure having a constant film thickness without variations. Consequently, JFET characteristics can also be made constant. COPYRIGHT: (C)2011,JPO&INPIT
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