| 摘要 |
A manufacturing method for a semiconductor integrated device including forming a second impurity layer of a second conductivity type that is higher in impurity concentration than a second well of the second conductivity type on a first impurity layer of a first conductivity type that is higher in impurity concentration than a first well of the first conductivity type, forming the first well of the first conductivity type on the second impurity layer of the second conductivity type on the first impurity layer of the first conductivity type, the first well being supplied with potential from the first impurity layer of the first conductivity type, and forming the second well of the second conductivity type on the second impurity layer of the second conductivity type on the first impurity layer of the first conductivity type, the second well being supplied with potential from the second impurity layer of the second conductivity type.
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