| 摘要 |
PROBLEM TO BE SOLVED: To prevent adjacent word lines (conductive layers) from being closer when a silicide is formed over a gate electrode. SOLUTION: A plurality of gate structures are formed, by laminating a gate insulating film 7, a charge storage layer 8, an inter-electrode dielectric 9, and a silicon layer 10 on a semiconductor substrate 1, and processing the silicon layer 10, the inter-electrode dielectric 9 and the charge storage layer 8. Inter-memory-cell insulating films 11 are formed in grooves 18 between the plurality of gate structures and processed so as to expose upper portions of the silicon layer 10. A metal film 21 is formed on the inter-memory-cell insulating films 11 and the silicon layer 10, and heated at first temperature to react the silicon layer 10 with the metal film 21 to make a silicide, and a non-reacting metal film 21 is removed. The inter-memory-cell insulating films 11 and the silicon layer 10, which has been made to be the silicide, are covered with a liner insulating film 12, and the silicon layer 10, which has been made to be the silicide, is heated at second temperature higher than the first temperature. COPYRIGHT: (C)2011,JPO&INPIT
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