发明名称 |
Semiconductor device manufacturing method and semiconductor device |
摘要 |
Disclosed is a semiconductor device manufacturing method in which a silicon nitride film is formed to cover an n-channel transistor formed on a semiconductor substrate and to apply a tensile stress in a channel length direction to a channel of the n-channel transistor, the method includes: forming a first-layer silicon nitride film above the n-channel transistor; irradiating the first-layer silicon nitride film with ultraviolet radiation; and after the ultraviolet irradiation, forming at least one silicon nitride film thinner than the first-layer silicon nitride film above the first-layer silicon nitride film. Silicon nitride films formed to apply the tensile stress is formed by respective steps.
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申请公布号 |
US7960764(B2) |
申请公布日期 |
2011.06.14 |
申请号 |
US20100805940 |
申请日期 |
2010.08.25 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
IDAKA TOSHIAKI;YAHIRO KAZUYUKI |
分类号 |
H01L29/76;H01L23/58;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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