发明名称 Capacitor and semiconductor device including the same
摘要 A capacitor includes a first capacitor structure on a substrate, the first capacitor structure including a first electrode, a first dielectric layer pattern, and a second electrode, a second capacitor structure on the first capacitor structure, the second capacitor structure including a third electrode, a second dielectric layer pattern, and a fourth electrode, at least one first contact pad on a side of the first electrode, and a wiring structure connecting the at least one first contact pad and the fourth electrode.
申请公布号 US7956440(B2) 申请公布日期 2011.06.07
申请号 US20080314201 申请日期 2008.12.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YUN KWAN-YOUNG
分类号 H01L27/108;H01L29/00;H01L29/76;H01L29/94;H01L31/119 主分类号 H01L27/108
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