| 摘要 |
In one embodiment, a SPICE corner model generating method for generating a SPICE corner model of an MOSFET includes preparing a table of a ratio X regarding a combination of two kinds of MOSFETs selected from N kinds of MOSFETs, the ratio X being a magnitude of a variation of an MOSFET in a case where directions of variations of the two kinds of MOSFETs are opposite directions to a magnitude of a variation of an MOSFET in a case where the directions of the variations of the two kinds of MOSFETs are the same direction, where N is an integer of 2 or greater. The method further includes reading out, when a combination of two kinds of MOSFETs is designated among the N kinds of MOSFETs, a value of the ratio X corresponding the designated combination from the table of the ratio X. The method further includes forming two kinds of corner models of opposite directional variations, the two kinds of corner models including a first corner model generated by applying the value of the ratio X to a fast-side corner of a first MOSFET of the two kinds of MOSFETs and to a slow-side corner of a second MOSFET of the two kinds of MOSFETs, and a second corner model generated by applying the value of the ratio X to a slow-side corner of the first MOSFET and to a fast-side corner of the second MOSFET.
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