| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device breakdown resistance of which can be improved, while reducing the on-resistance. <P>SOLUTION: The semiconductor device 1 has, on an N<SP>-</SP>-type silicon substrate 2 (the drain region), a field clamp diode structure formed by forming an active region 4 as a functional element formation region provided in an inner region and a P<SP>+</SP>-type low-resistance region 5 formed at the outermost peripheral portion of the active region 4 that continuously surrounds the active region 4. In the active region 4, a plurality of MOS FETs 3 are formed as functional elements. The MOS FETs 3 are not formed outside a region enclosed by the low-resistance region 5. A diode (field clamp diode) D<SB>F1</SB>, formed of the N<SP>-</SP>-type region 2 and low-resistance region 5 is connected electrically, in parallel with the MOS FETs 3. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
