INDIRECT BONDING WITH DISAPPEARANCE OF BONDING LAYER

摘要

PROBLEM TO BE SOLVED: To provide a method of forming an SeOI structure of a semiconductor material which cannot be bonded directly to a support substrate. SOLUTION: The method includes the steps of using a semiconductor donor substrate comprising a lower layer 1 and an upper layer 2 and forming on the upper layer 2 a bonding layer 3 of a material that accepts diffusion of an element of the material of the upper layer 2; cleaning the bonding layer 3 for securing its bonding adhesion; bonding the donor substrate, from the side of the bonding layer 3 preformed on the upper layer 2 and cleaned, to the support substrate 20; and diffusing the element from the upper layer 2 into the bonding layer 3 and homogenize the concentration of the element in the bonding layer and the upper layer, to constitute a thin layer on a surface of the support substrate 20. COPYRIGHT: (C)2011,JPO&INPIT