PLASMA PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a plasma etching apparatus that achieves long-term stable performance by reducing the non-uniformity of the electric field in the outer peripheral part of a substrate to be processed by plasma.

SOLUTION: A plasma processing device has a focus ring provided on an electrode for placing a substrate to be processed thereon while surrounding the outer periphery of the substrate to be processed. The focus ring comprises: a first focus ring made of a conductor and provided on an electrostatic attraction film on the upper surface of the electrode for placing a substrate to be processed thereon; a second focus ring made of a dielectric and provided on the first focus ring; and a third focus ring made of a conductor and provided on the second focus ring. The first focus ring is provided so as to be in contact with plasma while having the upper-surface height almost equal to that of the substrate to be processed.

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