| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CVD apparatus capable of suppressing reduction in film quality by stabilizing the discharge state of plasma, at the beginning of film formation. <P>SOLUTION: The CVD apparatus decomposes a material gas, with plasma generated in a chamber and forms an amorphous silicon film on a substrate includes the chamber; an anode electrode having a substrate placing portion where the substrate is placed and a substrate heater portion, capable of performing temperature control so that the temperature of the placed substrate reaches a temperature suitable for the film formation; a cathode electrode provided at a position opposite the substrate placed on the substrate placing portion; and a shutter portion provided between the cathode electrode and substrate placing portion for allowing the substrate placed on the substrate placing portion to face the cathode electrode, in an open state, and to discontinue allowing the substrate to face the cathode electrode in a closed state, wherein the shutter portion is provided with a heater portion capable of controlling the temperature of the shutter portion to a temperature, corresponding to the temperature of the substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT |
