发明名称 Nonvolatile semiconductor storage apparatus and method for manufacturing the same
摘要 According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage apparatus including: a substrate; a columnar semiconductor disposed perpendicular to the substrate; a charge storage laminated film disposed around the columnar semiconductor; a first conductor layer that is in contact with the charge storage laminated film and that has a first end portion having a first end face; a second conductor layer that is in contact with the charge storage laminated film, that is separated from the first conductor layer and that has a second end portion having a second end face; a first contact plug disposed on the first end face; and a second contact plug disposed on the second end face.
申请公布号 US7952136(B2) 申请公布日期 2011.05.31
申请号 US20070874004 申请日期 2007.10.17
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KITO MASARU;INOUE HIROFUMI
分类号 H01L29/788 主分类号 H01L29/788
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