PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE,申请号KR20117008827-传众专利搜索

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发明名称	PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要
申请公布号	KR20110056551(A)	申请公布日期	2011.05.30
申请号	KR20117008827	申请日期	2007.05.30
申请人	TOKYO ELECTRON LIMITED	发明人	KOHNO MASAYUKI;NISHITA TATSUO;NAKANISHI TOSHIO
分类号	C23C16/30;C23C16/44;H01L21/205	主分类号	C23C16/30
代理机构		代理人
主权项
地址

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