发明名称 |
NEW INTRINSIC ABSORBER LAYER FOR PHOTOVOLTAIC CELLS |
摘要 |
So as to manufacture an intrinsic absorber layer of amorphous hydrogenated silicon within a p-i-n configuration a solar cell by PeCvD deposition upon a base structure, thereby improving throughput an simultaneously maintaining quality of the absorber layer, a specific processing regime is proposed, wherein in the reactor for depositing the addressed absorber layer a pressure of between 1 mbar and 1.8 mbar is established and a flow of silane and of hydrogen with a dilution of silane to hydrogen of 1:4 up to 1:10 and generating an RF plasma with a generator power of between 600W and 1200W per 1.4m2 base structure surface to be coated. |
申请公布号 |
WO2011061113(A2) |
申请公布日期 |
2011.05.26 |
申请号 |
WO2010EP67311 |
申请日期 |
2010.11.11 |
申请人 |
OERLIKON SOLAR AG, TRUEBBACH;BAKEHE-ANANGA, SYLVIE-NOELLE;BENAGLI, STEFANO |
发明人 |
BAKEHE-ANANGA, SYLVIE-NOELLE;BENAGLI, STEFANO |
分类号 |
H01L31/20 |
主分类号 |
H01L31/20 |
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