发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR FOR TRANSISTOR AND METHOD OF MANUFACTURING THE TRANSISTOR |
摘要 |
A method of manufacturing a semiconductor for a transistor that includes forming a precursor layer by coating a surface of an insulation substrate with a precursor solution for an oxide semiconductor, forming an oxide semiconductor by oxidizing a portion of the precursor layer, and removing a remaining precursor layer except for the oxide semiconductor.
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申请公布号 |
US2011124152(A1) |
申请公布日期 |
2011.05.26 |
申请号 |
US20100829977 |
申请日期 |
2010.07.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN BO-KYOUNG;JANG SEON-PIL;JO GUG-RAE;YOO HONG-SUK;KIM CHANG-HOON;KIM MIN-UK;BAE JU-HAN |
分类号 |
H01L21/36 |
主分类号 |
H01L21/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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