SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD MANUFACTURING THEREOF

摘要

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve light extraction efficiency by forming a light guide unit with a semicircular or polygonal shape on a p type nitride semiconductor layer. CONSTITUTION: An n type nitride semiconductor layer is formed on a substrate. An active layer(350) is formed on the n type nitride semiconductor layer. The p type nitride semiconductor layer is formed on the active layer. A groove is formed on the p type nitride semiconductor layer to have a preset pattern. A light guide unit(365) made of non-conductive transparent materials is formed on a groove. A transparent electrode layer(370) is formed on the p type nitride semiconductor layer to include the light guide unit.