ETCHING METHOD AND THE SYSTEM OF SILICON DIOXIDE FILM USING DENSED CARBON DIOXIDE

摘要

PURPOSE: A method and system for etching a silicon oxide film using a dense carbon dioxide are provided to eliminate generation of etching byproducts, thereby omitting an additional cleaning process. CONSTITUTION: A semiconductor substrate for forming a structure is provided into a processing chamber(S10). Highly dense carbon dioxide is supplied into the processing chamber to etch a sacrificial film(S20). Pure highly dense carbon dioxide is supplied so that fluid in the processing chamber is eliminated(S30). The pressure of the processing chamber is lowered so that the substrate is dried(S40).