发明名称 Free standing single-crystal nanowire growth by electro-chemical deposition
摘要 The present invention relates to a method for obtaining monocrystalline or single crystal nanowires. Said nanowires are grown in a pattern making use of electro-chemical deposition techniques. Most preferred, the electrolytic bath is based on chlorides and has an acidic pH. Single element as well as combinations of two elements nanowires can be grown. Depending on the element properties the obtained nanowire can have metallic (conductive) or semi-metallic (semi-conductive) properties. The observed nanowire growth presents an unusual behavior compared to the classical nanowire template-assisted growth where a cap is formed as soon as the metal grows out of the pattern. Under given conditions of bath composition and potential (current) settings the nanowires grow out of the pattern up to a few microns without any significant lateral overgrowth.
申请公布号 US7947162(B2) 申请公布日期 2011.05.24
申请号 US20070746023 申请日期 2007.05.08
申请人 IMEC;KATHOLIEKE UNIVERSITEIT LEUVEN (KUL) 发明人 HAUTIER GEOFFROY;VEREECKEN PHILIPPE M.
分类号 C25D5/02 主分类号 C25D5/02
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