发明名称 Multi-layered memory devices
摘要 A multi-layered memory device is provided. The multi-layered memory device includes two or more memory units and an active circuit unit arranged between each of the two or more memory units. The active circuit includes a decoder. Each memory unit includes one or more memory layers. Each memory layer includes a memory array.
申请公布号 US2011116336(A1) 申请公布日期 2011.05.19
申请号 US20110929354 申请日期 2011.01.19
申请人 PARK JAECHUL;KWON KEEWON;PARK YOUNGSOO;LEE SEUNGHOON;AHN SEUNGEON 发明人 PARK JAECHUL;KWON KEEWON;PARK YOUNGSOO;LEE SEUNGHOON;AHN SEUNGEON
分类号 G11C8/10 主分类号 G11C8/10
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