METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

In the provided method for manufacturing a semiconductor substrate, a first silicon carbide substrate (11) has a first top surface (F1) and a first lateral surface. A second silicon carbide substrate (12) has a second top surface (F2) and a second lateral surface. The second lateral surface is disposed such that a gap, which has an opening between the respective first and second top surfaces (F1, F2) of the first and second silicon carbide substrates (11, 12), is formed between the first and second lateral surfaces. A plug part (70) that plugs the gap is provided above the opening. Depositing a sublimate from the first and second lateral surfaces onto the plug part (70) forms a joining part (BDa) that connects the first and second lateral surfaces so as to plug up the opening. After the step in which the joining part (BDa) is formed, the plug part (70) is removed.