| 摘要 |
A method is described in which a contact hole to an interconnect in an insulating layer is fabricated. A barrier layer is subsequently applied. Afterward, a photoresist layer is applied, irradiated and developed. With the aid of a galvanic method, a copper contact is then produced in the contact hole. Either the barrier layer or an additional boundary electrode layer serves as a boundary electrode in the galvanic process. Critical metal contaminations are minimized in production.
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