METHOD FOR PROCESSING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for processing a minute semiconductor device, and particularly to provide a processing method suitable for miniaturization of a device having a structure normally called a high-k/metal gate. SOLUTION: An insulation film formed on a Si substrate and containing Hf or Zr and a deposited film present on the upper or lower layer thereof or in the film are removed by repeating dry etching and wet etching one or more times by putting the wet etching first. COPYRIGHT: (C)2011,JPO&INPIT