| 摘要 |
A method of processing a silicon wafer (4, fig.1), a device manufacturing method (e.g. for high frequency integrated circuits) or a silicon wafer (4, fig.1) substrate for an electronic circuit wherein the silicon wafer (4, fig.1) is impregnated with impurities (e.g. gold, silver, chromium, cobalt, palladium, vanadium and manganese with concentration of 1013-1018 cm-3) that form one or more deep energy levels, wherein at least one of said deep energy levels is positioned at least 0.3eV away from the conduction band or the valence band wherein the ratio between the maximum concentration of said impurities in said silicon wafer (4, fig.1) and the average concentration of said impurities in said silicon wafer (4, fig.1) is less than 7:1. A device layer (8, fig.1) and a diffusion barrier layer (6, fig.1) may be formed on the wafer (4, fig.1). The impregnating step may comprise in-diffusion whereby a source S504 (16, fig.6) is brought into contact with a diffusion-inhibiting layer S502 (18, fig.6) on the surface of the silicon wafer (4, fig.6) surface and annealing S506 is performed. The silicon wafer (4, fig.1) may be Czochralski silicon and may be shallow n-doped or p-doped. |
