| 摘要 |
According a method of manufacturing a semiconductor device, a polysilicon layer is formed on a semiconductor substrate and is patterned, thereby forming a storage electrode and plate electrode in a memory cell region and leaving the polysilicon layer in an aligning mark formation region. An interlevel insulating film is formed on the semiconductor substrate including the storage electrode, plate electrode, and polysilicon layer. An upper interconnection layer is formed on the polysilicon layer and is patterned, thereby forming an upper interconnection layer in the memory cell region and an aligning mark in the aligning mark formation region. An interlevel insulating film is formed on the upper interconnection layer and aligning mark and is etched back, thereby planarizing the memory cell region and aligning mark formation region and removing the interlevel insulating film on the aligning mark.
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