| 摘要 |
<p>PURPOSE: An overlay vernier of a semiconductor device is provided to deform the shape of a vernier to maximize an area where a support layer pattern is formed, thereby preventing a lower electrode from falling down in a motor vernier. CONSTITUTION: A first pattern is formed in a mother vernier of a box shape. A son vernier(65) is composed of a first son vernier(60) and a plurality of second son verniers(62) placed in an edge of the first son vernier. A third son vernier(64) connects the second son verniers. The line width of the third son vernier is narrower than the line width of the second son vernier. The shape of a second pattern is the same as the shape of a support layer pattern of a cell area in the son vernier.</p> |
