| 摘要 |
<p>The method for producing a single crystal from silicon by remelting of granules, comprises crystallizing a cone-shaped extended portion (1) of the single crystal by means of an induction heating coil (7), which is arranged under a self-rotating plate (5) made of silicon, and supplying inductively melted silicon through a conical tube of the plate that surrounds a central opening of the plate and extends itself under the plate to a melt (3), which is present in the cone-shaped extended portion of the single crystal and has the contact to a tube end of the conical tube. The method for producing a single crystal from silicon by remelting of granules, comprises crystallizing a cone-shaped extended portion (1) of the single crystal by means of an induction heating coil (7), which is arranged under a self-rotating plate (5) made of silicon, and supplying inductively melted silicon through a conical tube of the plate that surrounds a central opening of the plate and extends itself under the plate to a melt (3), which is present in the cone-shaped extended portion of the single crystal and has the contact to a tube end of the conical tube, where the sufficient energy is provided by means of the induction heating coil arranged under the plate so that the outside diameter of the tube end is not smaller than 15 mm, and as long as the cone-shaped extended portion of the single crystal has a diameter of 15-30 mm and is crystallized. The ratio of the outside diameter of the tube end and the diameter of an interior hole of the induction heating coil is 1:3 or larger.</p> |
