| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to eliminate a nitride film for an oxidized gate spacer by a dry cleaning process to obtain an open area between gate patterns, thereby preventing the gate patterns from being not opened. CONSTITUTION: A gate pattern(140) is formed on a semiconductor substrate(100). The gate pattern comprises a gate insulating film(110), a gate conductive layer(120), and a gate hard mask layer(130). A nitride film(150) for a gate spacer is formed on the frontal surface with the gate pattern. A dry oxidation process is performed on the nitride film for a gate spacer. The nitride film for a gate spacer is eliminated by a cleaning process.
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