| 摘要 |
<p>The method involves covering main surface of the wafer in liquid tight manner, where the wafer is dipped into a reservoir, which has a solution based on anions of silicic acid or anions of a salt of the silica and doped-ions of an element of the fifth main group of the periodic table. The direct current is applied between wafer and another electrode at the uncovered another main surface of the wafer. An independent claim is also included for a silicon wafer.</p> |
