| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus with a capacitor which is capable of achieving high integration with ease. SOLUTION: A semiconductor apparatus has a semiconductor substrate 10, an insulating layer 20 formed on the semiconductor substrate 10 with an opening OP, and first and second capacitors CAP1 and CAP2 formed on the insulating layer 20. An upper surface of the insulating layer 20 includes a first upper surface including at least a part of an inner wall surface of the opening OP and a second upper surface farther apart from the semiconductor substrate as compared with the first upper surface. The first capacitor CAP1 has a first lower electrode 51 formed on the first upper surface and an upper electrode 70 formed on the first lower electrode 51 via a dielectric film 60. The second capacitor CAP2 has a second lower electrode 52 formed on the second upper surface and electrically separated from the first lower electrode 51, and the upper electrode 70 formed on the second lower electrode 52 via the dielectric film 60. COPYRIGHT: (C)2011,JPO&INPIT
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