THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A three dimensional semiconductor memory device and a method of fabricating the same are provided to prevent disturbance in reading data from a selected cell string by selectively applying voltage to ground selection lines. CONSTITUTION: In a three dimensional semiconductor memory device and a method of fabricating the same, an insulating layer(121) and a sacrificial layer pattern(131) are formed on a substrate(10). The substrate comprises a cell array area, a peripheral circuit area and a contact area. After the sacrificial layer pattern forms a sacrificing layer on the insulating layer, the sacrificing layer is patterned. A reserved separation pattern(20) is formed between sacrificial layer patterns. The reserved separation pattern is formed by the sacrificial layer pattern and an insulating material having etching selectivity.