| 摘要 |
1,073,749. Semi-conductor devices. SIEMENS A.G. Sept. 14, 1964 [Sept. 13, 1963], No. 37425/64. Heading H1K. A semi-conductor device consists of a thick low-restivity layer 24 surmounted by a thin high-resistivity layer 26 of opposite conductivity type which is in turn surmounted by a thin layer 27 of the same conductivity type as the thick layer. When a probe 28 contacts the free surface of the upper layer, and is connected as shown to a source of potential (with or without a control connection to the central layer) so that the probe-contacted layer functions as collector, the collector current increases with the pressure applied by the probe. The invention is an improvement on a known device (Fig. 1, not shown) in which the probe contacts the emitter of a transistor and the output current decreases with increasing probe pressure. Fig. 2 (not shown) depicts a planar NPN structure in which P and N base and collector zones (12, 13) have been successively diffused through surface oxide masks into an N-type silicon (or germanium or A3 B5 compound) body (11). Fig. 3 depicts an equivalent mesa structure in which P-type material has been epitaxially grown on to an N-type emitter body 24 and a subsequent heat treatment has diffused the PN junction from the location 25a to the location 25. The N-type collector region 27 has then been formed at the surface of the P-type region by diffusion. Final shaping to the mesa form was by chemical etching. In both forms the collector electrode 30 and the probe 28 contact the collector layer through an aperture in the surface oxide layer 29. Transducers embodying devices according to this invention are described in Specification 1,073,750 (see Division E1), which is referred to.
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