PLASMA ETCHING METHOD FOR PRODUCING POSITIVE ETCHING PROFILES IN SILICON SUBSTRATES,申请号EP20070785710-传众专利搜索

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发明名称	PLASMA ETCHING METHOD FOR PRODUCING POSITIVE ETCHING PROFILES IN SILICON SUBSTRATES
摘要
申请公布号	EP2084734(B1)	申请公布日期	2011.05.11
申请号	EP20070785710	申请日期	2007.08.15
申请人	TECHNISCHE UNIVERSITAET DRESDEN	发明人	RICHTER, KAROLA;ZSCHAETZSCH, GERD
分类号	H01L21/3065;B81C1/00	主分类号	H01L21/3065
代理机构		代理人
主权项
地址

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