发明名称 |
A LATERAL FIELD EFFECT TRANSISTOR OF SIC, A METHOD FOR PRODUCTION THEREOF AND A USE OF SUCH A TRANSISTOR |
摘要 |
A lateral field effected transistor of SiC for high switching frequencies comprises a source region layer (5) and a drain region layer (6) laterally spaced and highly doped n-type, an n-type channel layer (4) extending laterally and interconnecting the source region layer and the drain region layer for conducting a current between these layers in the on-state of the transistor, and a gate electrode (9) arranged to control the channel layer to be conducting or blocking through varying the potential applied to the gate electrode. A highly doped p-type base layer (12) is arranged next to the channel layer at least partially overlapping the gate electrode and being at a lateral distance to the drain region layer. The base layer is shorted to the source region layer.
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申请公布号 |
CA2361752(C) |
申请公布日期 |
2011.05.10 |
申请号 |
CA20002361752 |
申请日期 |
2000.02.01 |
申请人 |
ACREO AB |
发明人 |
HARRIS, CHRISTOPHER;KONSTANTINOV, ANDREI |
分类号 |
H01L21/335;H01L29/78;H01L;H01L21/338;H01L29/24;H01L29/772;H01L29/812 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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