| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a trench gate structure and a trench contact structure, in which the size of a cell is made compact as far as possible while having low on resistance. <P>SOLUTION: The semiconductor device includes a base layer 3 having a first conductivity type, a source layer 4 formed on the base layer 3 and having a second conductivity type, and an insulating film 5 formed on the source layer 4. Further, the semiconductor device includes a plurality of gate structures GT penetrating the base layer 4, and a plurality of conductive portions 8 penetrating the insulating film 5 and source layer 4 and electrically connected with the source layer 4 and base layer 3. The gate structures GT are formed in stripes in plan view. Portions where the conductive portions 8 are connected to the base layer 3 are formed in stripes in plan view, and formed between the gate structures GT. Furthermore, portions between the gate structures GT and conductive portions 8 where the source layer 4 and base layer 3 come into contact with each other have a size of≥0.36μm. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
