摘要 |
PROBLEM TO BE SOLVED: To align crystal c-axes in magnetic layers near two opposed junction wall faces of a magneto-resistive element so as to be almost perpendicular to the junction wall faces. SOLUTION: The magnetic sensor stack body 1 has, on a substrate 31, a magnetoresistive element 10 whose electric resistance fluctuates when a bias magnetic field is applied and, on sides of opposed junction wall faces 10a, 10b of the magneto-resistive element 10, field regions 22 including magnetic layers 22a, 22b for applying the bias magnetic field to the element 10. The magnetoresistive element 10 has at least a ferromagnetic stack 18 on a part of an antiferromagnetic layer 13, and a width W<SB>F</SB>of an uppermost face of the ferromagnetic stack 18 along a direction in which the junction wall faces 10a, 10b are opposed to each other is formed smaller than a width W<SB>A</SB>of an uppermost face of the anti-ferromagnetic layer 13 along the same direction. COPYRIGHT: (C)2011,JPO&INPIT |