发明名称 |
NON-LINEAR ELEMENT, DISPLAY DEVICE INCLUDING NON-LINEAR ELEMENT, AND ELECTRONIC DEVICE INCLUDING DISPLAY DEVICE |
摘要 |
A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5 x 1019 /cm3, the work function ?ms of a source electrode in contact with the oxide semiconductor, the work function ?md of a drain electrode in contact with the oxide semiconductor, and electron affinity ? of the oxide semiconductor satisfy ?ms = ? ?md. By electrically connecting a gate electrode and the drain electrode of the thin film transistor, a non-linear element with a more favorable rectification property can be achieved. |
申请公布号 |
WO2011052437(A1) |
申请公布日期 |
2011.05.05 |
申请号 |
WO2010JP68414 |
申请日期 |
2010.10.13 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMAZAKI, SHUNPEI;KAWAE, DAISUKE |
发明人 |
YAMAZAKI, SHUNPEI;KAWAE, DAISUKE |
分类号 |
H01L29/47;H01L29/786;H01L29/872;H01L49/02 |
主分类号 |
H01L29/47 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|