| 摘要 |
A chip integrated ion sensor is provided, which comprises a substrate having arranged thereon an electrolyte insulator semiconductor structure and a reference electrode. In particular, the electrolyte insulator semiconductor (EIS) structure may be formed on a chip already processed, i.e. the EIS structure may be formed in a Back End process on an already formed chip comprising a plurality of formed electronic components. In particular, the ion sensor may be adapted to form an ion concentration sensor, e.g. a pH sensor, i.e. may form a pH sensor. The reference electrode may be a non-polarizable electrode. In particular, the reference electrode may comprise Ag or AgCl as material.
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