发明名称 |
TRANSISTOR WITH GAIN VARIATION COMPENSATION |
摘要 |
<p>A semiconductor device and method of making comprises providing an active device region and an isolation region, the isolation region forming a boundary with the active device region. A patterned gate material overlies the active device region between first and second portions of the boundary. The patterned gate material defines a channel within the active device region, the gate material having a gate length dimension perpendicular to a centerline along a principal dimension of the gate material which is larger proximate the first and second portions of the boundary than in-between the first and second portions of the boundary. The channel includes a first end proximate the first portion of the boundary and a second end proximate the second portion of the boundary, further being characterized by gate length dimension tapering on both ends of the channel.</p> |
申请公布号 |
EP2316126(A1) |
申请公布日期 |
2011.05.04 |
申请号 |
EP20090808557 |
申请日期 |
2009.06.25 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
RIVIERE-CAZAUX, LIONEL, J. |
分类号 |
H01L29/423;H01L21/336;H01L29/78 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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