发明名称 TRANSISTOR WITH GAIN VARIATION COMPENSATION
摘要 <p>A semiconductor device and method of making comprises providing an active device region and an isolation region, the isolation region forming a boundary with the active device region. A patterned gate material overlies the active device region between first and second portions of the boundary. The patterned gate material defines a channel within the active device region, the gate material having a gate length dimension perpendicular to a centerline along a principal dimension of the gate material which is larger proximate the first and second portions of the boundary than in-between the first and second portions of the boundary. The channel includes a first end proximate the first portion of the boundary and a second end proximate the second portion of the boundary, further being characterized by gate length dimension tapering on both ends of the channel.</p>
申请公布号 EP2316126(A1) 申请公布日期 2011.05.04
申请号 EP20090808557 申请日期 2009.06.25
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 RIVIERE-CAZAUX, LIONEL, J.
分类号 H01L29/423;H01L21/336;H01L29/78 主分类号 H01L29/423
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