发明名称 |
Double patterning strategy for contact hole and trench |
摘要 |
A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including at least one opening therein on the substrate; curing the first resist pattern; forming a second resist pattern on the substrate; forming a material layer on the substrate; and removing the first and second resist patterns to expose the substrate.
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申请公布号 |
US7935477(B2) |
申请公布日期 |
2011.05.03 |
申请号 |
US20070948444 |
申请日期 |
2007.11.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSU FENG-CHENG;CHEN CHUN-KUANG |
分类号 |
G03F7/26 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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