发明名称 |
Method of forming PZT ferroelectric capacitors for integrated circuits |
摘要 |
One aspect of the invention relates to a method of manufacturing an integrated circuit comprising forming an array of ferroelectric memory cells on a semiconductor substrate, heating the substrate to a temperature near a Curie temperature of the ferroelectric cores, and subjecting the substrate to a temperature program, whereby thermally induced stresses on the ferroelectric cores cause a switched polarization of the cores to increase by at least about 25% as the cores cool to about room temperature. Embodiments of the invention include metal filled vias of expanded cross-section above and below the ferroelectric cores, which increase the thermal stresses on the ferroelectric cores during cooling.
|
申请公布号 |
US7935543(B2) |
申请公布日期 |
2011.05.03 |
申请号 |
US20090472265 |
申请日期 |
2009.05.26 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MOISE, IV THEODORE S.;SUMMERFELT SCOTT R.;UDAYAKUMAR KEZHAKKEDATH R. |
分类号 |
H01L21/00;H01L21/02;H01L21/8246;H01L27/115 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|