发明名称 |
NONVOLATILE MEMORY DEVICE AND STORAGE SYSTEM HAVING THE SAME, DRIVING METHOD OF THE NONVOLATILE MEMORY DEVICE |
摘要 |
PURPOSE: A nonvolatile memory device and a storage system having the same, a driving method of the nonvolatile memory device are provided to improve the reliability of a reading operation by including a data read circuit. CONSTITUTION: In a nonvolatile memory device and a storage system having the same, a driving method of the nonvolatile memory device, a memory cell array comprises a plurality of nonvolatile memory cells. Each nonvolatile memory cell has a resistor. The resistor is one of a plurality of first resistors. . A temperature compensation circuit(17) comprises at least one reference cell(110). Each reference cell has a resistor. . The resistor is one of a plurality of second resistors A data read circuit supplies a compensating current to a sensing node. The data read circuit comprises a compensation unit and a sense amp unit The amount of compensation current is changed according to the resistance of a reference cell. |
申请公布号 |
KR20110044535(A) |
申请公布日期 |
2011.04.29 |
申请号 |
KR20090101262 |
申请日期 |
2009.10.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE, JUN SOO;LEE, KWANG JIN;CHO, BEAK HYUNG |
分类号 |
G11C13/02;G11C16/00;G11C16/26 |
主分类号 |
G11C13/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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