EPITAXIAL SUBSTRATE FOR BACKSIDE ILLUMINATION TYPE SOLID-STATE IMAGE PICKUP ELEMENT AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial substrate for a backside illumination type solid-state image pickup element capable of suppressing metal contamination and reducing the occurrence of a blemish defect in a solid-state image pickup element by maintaining a sufficient gettering capacity during a device manufacturing process, and to provide a method of manufacturing the epitaxial substrate for the backside illumination type solid-state image pickup element. SOLUTION: The method of manufacturing the epitaxial substrate for the backside illumination type solid-state image pickup element includes: a process of forming a p-type first epitaxial layer on a p-type or n-type silicon substrate to which carbon and/or nitrogen is added while including a resistivity of not lower than 0.1Ωcm; a process of forming a p-type or n-type second epitaxial layer on the first epitaxial layer; and a heat-treatment process of forming a precipitation range on the silicon substrate. COPYRIGHT: (C)2011,JPO&INPIT