| 摘要 |
PURPOSE: A method for improving step coverage of a semiconductor device is provided to easily perform a patterning process of a metal interconnection by improving the step coverage of a dynamic random access memory(DRAM) region and a logic region, and to form a dummy pattern by varying a pattern of a conventional mask without using an additional mask for the dummy pattern. CONSTITUTION: A pattern for forming the dummy pattern is inserted into a region having lower pattern density among the memory region and logic region to maintain uniform pattern density of the memory region and logic region. The metal interconnection(32) is formed in the memory region and the logic region.
|
