| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment method and a heat treatment apparatus, allowing for an excellent activation of an implanted impurity while preventing a crack of a substrate. SOLUTION: A flash lamp performs a light irradiation onto a semiconductor wafer with an output waveform having two emission peaks EP1, EP2. A peak interval tp between the emission peak EP1 and the emission peak EP2 is 5-100 ms. An average luminous output L3 during the peak interval is≤50% of the highest achieved output L1 of the minimum emission peak EP1 among two emission peaks EP1, EP2. In a temperature profile drawn by a surface of the semiconductor wafer by the light irradiation with such an output waveform, a total residence time in 700-900°C during a temperature rising process and a temperature dropping process with respect to each of two temperature peaks TP1, TP2 corresponding to the two emission peaks EP1, EP2 is 15 ms or shorter. COPYRIGHT: (C)2011,JPO&INPIT
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