A method for repairing damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A repair gas comprising CH4 gas is provided. The repair gas is formed into a plasma, while maintaining a pressure below 50 mTorr. Hydroxyl attached to silicon is replaced with methyl from the plasma formed by the repair gas.
申请公布号
WO2011050062(A2)
申请公布日期
2011.04.28
申请号
WO2010US53377
申请日期
2010.10.20
申请人
LAM RESEARCH CORPORATION;SIRARD, STEPHEN, M.;TAKESHITA, KENJI;BAILEY III, ANDREW D.
发明人
SIRARD, STEPHEN, M.;TAKESHITA, KENJI;BAILEY III, ANDREW D.