| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device having improved reliability in data read operation. <P>SOLUTION: The nonvolatile semiconductor storage device has a memory cell array, a first wiring, a second wiring and a control circuit. The memory cell array is configured by arranging memory strings, each of which includes a plurality of memory cells connected in series. The first wiring is electrically connected to one end of the memory string, and charged to a first voltage in read operation. The second wiring is electrically connected to another end of the memory string and charged to a second voltage which is lower than the first voltage in read operation. The control circuit is configured to, in write operation, control the write operation in each of the memory strings such that data are sequentially written from the memory cell located closer to the second wiring. On the other hand, the control circuit is configured to, in read operation, apply a higher voltage to gates of unselected memory cells as a selected memory cell is located at a region closer to the first wiring. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
