| 发明名称 |
A method of forming monocrystalline germanium or silicon germanium |
| 摘要 |
The present invention is related to a method of forming mono-crystalline germanium or silicon germanium in trenches provided in a substrate. In particular, the present invention is directed to an improved method of forming mono-crystalline germanium or silicon germanium fin structures on a semiconducting substrate.
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| 申请公布号 |
EP2315239(A1) |
申请公布日期 |
2011.04.27 |
| 申请号 |
EP20090173972 |
申请日期 |
2009.10.23 |
| 申请人 |
IMEC;KATHOLIEKE UNIVERSITEIT LEUVEN, K.U. LEUVEN R&D |
发明人 |
VANDERVORST, WILFRIED;WANG, GANG |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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