2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material
摘要
Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-tenninal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer,
申请公布号
EP2315288(A2)
申请公布日期
2011.04.27
申请号
EP20110151106
申请日期
2004.12.14
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE