发明名称 |
GRAPHENE SYNTHESIS BY CHEMICAL VAPOR DEPOSITION |
摘要 |
Processes for synthesizing graphene films. Graphene films may be synthesized by heating a metal or a dielectric on a substrate to a temperature between 400° C. and 1,400° C. The metal or dielectric is exposed to an organic compound thereby growing graphene from the organic compound on the metal or dielectric. The metal or dielectric is later cooled to room temperature. As a result of the above process, standalone graphene films may be synthesized with properties equivalent to exfoliated graphene from natural graphite that is scalable to size far greater than that available on silicon carbide, single crystal silicon substrates or from natural graphite.
|
申请公布号 |
US2011091647(A1) |
申请公布日期 |
2011.04.21 |
申请号 |
US20100774342 |
申请日期 |
2010.05.05 |
申请人 |
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM;TEXAS INSTRUMENTS, INC. |
发明人 |
COLOMBO LUIGI;LI XUESONG;RUOFF RODNEY S. |
分类号 |
C23C16/44;C23C16/26 |
主分类号 |
C23C16/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|